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Si1307EDL
Vishay Siliconix
P-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 12
R DS(on) ( Ω )
0.290 at V GS = - 4.5 V
0.435 at V GS = - 2.5 V
0.580 at V GS = - 1.8 V
I D (A)
± 0.91
± 0.74
± 0.64
? Halogen-free According to IEC 61249-2-21
Definition
? ESD Protection: 3000 V
? Compliant to RoHS Directive 2002/95/EC
SOT-323
SC-70 (3-LEADS)
G
1
Marking Code
3
D
LF
XX
Lot Tracea b ility
and Date Code
S
2
Part # Code
Top V ie w
Orderin g Information: Si1307EDL-T1-E3 (Lead (P b )-free)
Si1307EDL-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
- 12
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
± 0.91
± 0.72
±3
± 0.85
± 0.68
A
Continuous Diode Current (Diode Conduction) a
I S
- 0.28
- 0.24
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
0.34
0.22
- 55 to 150
0.29
0.19
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
315
360
285
375
430
340
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71096
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
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